IRF 822

The PMC IRF822 is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 500V and a continuous Drain current of up to 2.2A. It is supplied in a TO-220AB package and is suitable for high-voltage switching circuits, switch-mode power supplies, power converters and load-control applications.

Technical description

The IRF822 features a maximum RDS(on) on-state resistance of 4.0 Ohm with a Gate-Source drive voltage of 10V. Its Gate threshold voltage VGS(th) ranges from 2V to 4V, but this value indicates only the beginning of conduction and not the complete turn-on of the MOSFET.

A suitable gate-driver circuit, typically providing approximately 10V, is required for power-switching applications. Correct gate drive reduces conduction losses and limits the operating temperature of the component.

The device supports high-speed switching, high input impedance and avalanche operation. Its TO-220AB package allows mounting on a heatsink for improved thermal dissipation.

Typical applications

Suitable for SMPS power supplies, DC/DC converters, inverter circuits, electronic ballasts, motor and relay drivers, high-voltage power supplies and general switching of resistive or inductive loads.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, switching speed, power dissipation, package and terminal configuration.

Weight: approximately 0.002 kg.