ON(FAIRCHILD)IRF 830

The IRF830 is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 500V and a continuous Drain current of up to 4.5A. It is supplied in a TO-220AB package and is suitable for switch-mode power supplies, power converters, inverter circuits and high-voltage switching applications.

Technical description

The IRF830 features a maximum RDS(on) on-state resistance of 1.5 Ohm with a Gate-Source drive voltage of 10V. Its lower on-state resistance, compared with MOSFETs such as the IRF820 and IRF822, allows higher current handling with reduced conduction losses.

The Gate threshold voltage VGS(th) ranges from 2V to 4V. This value indicates only the beginning of conduction and is not the full turn-on voltage. A suitable gate-driver circuit providing approximately 10V is required for power-switching applications.

The device provides high input impedance, fast switching performance and avalanche pulse capability. Its TO-220AB package allows easy mounting on a heatsink for improved thermal dissipation.

Typical applications

Suitable for SMPS power supplies, UPS systems, DC/DC converters, inverter circuits, electronic ballasts, high-voltage power supplies, power controllers and general switching of resistive or inductive loads.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, switching speed, power dissipation, package and terminal configuration.

Weight: approximately 0.002 kg.