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SKU: 801.023.0239

VishayIRFR 9014

IRFR9014 P-Channel Power MOSFET 60V 5.1A SMD DPAK Vishay
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Indicative retail price (incl. 24% VAT): 3,10 €

IRFR9014 P-Channel Power MOSFET 60V 5.1A SMD DPAK / TO-252 by Vishay Siliconix, suitable for power switching applications, load switching, power supplies, DC-DC converters and SMD electronic circuits.

The IRFR9014 is a P-Channel Power MOSFET from Vishay Siliconix in a DPAK / TO-252 surface-mount package. It features -60V maximum Drain-Source voltage, -5.1A continuous Drain current and RDS(on) of 0.50 Ohm max at VGS -10V. It is suitable for applications requiring a P-Channel MOSFET for high-side switching, supply protection or controlled DC load switching.

Technical description

The IRFR9014 uses third-generation power MOSFET technology, providing fast switching, avalanche ruggedness and dynamic dV/dt rating. The DPAK / TO-252 package allows SMD mounting and heat dissipation through the PCB, using suitable copper area. The IRFR9014 is the SMD version of the series, while the corresponding straight-lead through-hole version is the IRFU9014.

Typical applications

Suitable for high-side switching, DC load switches, reverse polarity protection, power management, power supplies, DC-DC converters, battery powered circuits, automation systems, electronic devices and applications requiring a P-Channel MOSFET in an SMD package.

Compatibility note

The IRFR9014 is a P-Channel MOSFET, not an N-Channel MOSFET. Polarity, pin configuration and gate drive method differ from comparable N-Channel MOSFETs. Before replacement, verify the DPAK / TO-252 package, VDS voltage, ID current, RDS(on), P-Channel polarity and PCB thermal requirements.

Weight: approximately 0.001 kg.



Package weight: 0,001kg
Package volumetric: 0,001kg
ManufacturerVishay Siliconix
ModelIRFR9014
Related part numbersIRFR9014PbF / SiHFR9014
Corresponding through-hole versionIRFU9014
Product typePower MOSFET
PolarityP-Channel
ConfigurationSingle
Maximum Drain-Source voltage VDS-60V
Maximum continuous Drain current ID-5.1A @ TC 25°C
Continuous Drain current ID-3.2A @ TC 100°C
Pulsed Drain current IDMup to -20A
RDS(on)0.50 Ohm max @ VGS -10V
Gate threshold voltage VGS(th)-2.0V to -4.0V
Maximum Gate-Source voltage VGS+/-20V
Total gate charge Qgup to 12nC
Gate-to-Source charge Qgsapproximately 3.8nC
Gate-to-Drain charge Qgdapproximately 5.1nC
Input capacitance Cissapproximately 270pF
Output capacitance Cossapproximately 170pF
Reverse transfer capacitance Crssapproximately 31pF
Turn-on delay time td(on)approximately 11ns
Rise time trapproximately 63ns
Turn-off delay time td(off)approximately 9.6ns
Fall time tfapproximately 31ns
Power dissipation PDup to 25W @ TC 25°C
PCB mount power dissipationup to 2.5W @ TA 25°C
Single pulse avalanche energy EAS140mJ
Repetitive avalanche current IAR-5.1A
Repetitive avalanche energy EAR2.5mJ
Peak diode recovery dV/dt-4.5V/ns
Thermal resistance Junction-to-Case RthJCup to 5.0°C/W
Thermal resistance Junction-to-Ambient on PCB mountup to 50°C/W
Thermal resistance Junction-to-Ambientup to 110°C/W
Operating junction temperature-55°C to +150°C
Storage temperature-55°C to +150°C
PackageDPAK / TO-252
Mounting typeSMD / Surface Mount
TerminalsGate, Drain, Source
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Available in tape and reel versions
Suitable for high-side switching, power management, DC-DC converters and load switching
Not an N-Channel MOSFET
Not a TO-220 component
Approximate weight0.001 kg
Datasheets
Warranty / repair terms
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