Click for zoom

SKU: 801.023.0237

VishayIRF 540SPBF

Vishay IRF540SPbF N-Channel MOSFET 100V 28A D2PAK TO-263
To see purchase prices you must be a registered user!
Indicative retail price (incl. 24% VAT): 1,60 €

Vishay IRF540SPbF / IRF540S N-Channel Power MOSFET 100V 28A D2PAK / TO-263, suitable for switching power supplies, DC-DC converters, motor drivers, PWM circuits, load switching, industrial electronics and surface-mount power applications.

The IRF540SPbF by Vishay Siliconix is an N-Channel Power MOSFET in a D2PAK / TO-263 surface-mount package. It features 100V Drain-Source voltage, 28A continuous Drain current at 25°C and 0.077 Ohm max RDS(on) with 10V gate drive. The D2PAK / TO-263 package provides low internal connection resistance and is suitable for high-current power PCB designs requiring an SMD MOSFET.

Technical description

The IRF540SPbF is a third-generation Vishay power MOSFET designed for fast switching, low RDS(on), dynamic dv/dt rating and repetitive avalanche operation. The D2PAK / TO-263 package supports surface-mount assembly and good thermal performance when proper copper area and PCB thermal design are provided.

Typical applications

Suitable for switching power supplies, DC-DC converters, PWM drivers, motor drivers, load switching, voltage converters, power electronics, industrial automation and applications requiring a 100V N-Channel MOSFET in D2PAK / TO-263 package.

Compatibility note

The IRF540SPbF is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the exact part number, D2PAK / TO-263 SMD package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and PCB thermal design. It is not a logic-level MOSFET, so proper gate drive, typically 10V, is required for full enhancement.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerVishay Siliconix
ModelIRF540SPbF
Related typesIRF540S / SiHF540S
Product typePower MOSFET
PolarityN-Channel
ConfigurationSingle
Drain-Source voltage VDS100V
Continuous Drain current ID28A @ TC 25°C
Continuous Drain current ID20A @ TC 100°C
Pulsed Drain current IDM110A
Static Drain-Source on-resistance RDS(on)0.077 Ohm max @ VGS 10V, ID 17A
Gate threshold voltage VGS(th)2V to 4V
Gate-Source voltage VGS+/-20V
Maximum power dissipation PD150W @ TC 25°C
PCB mount power dissipationup to 3.7W @ TA 25°C, depending on PCB design
Linear derating factor1.0W/°C
Single pulse avalanche energy EAS230mJ
Avalanche current IAR28A
Repetitive avalanche energy EAR15mJ
Peak diode recovery dv/dt5.5V/ns
Operating junction temperature-55°C to +175°C
Storage temperature-55°C to +175°C
Soldering recommendations300°C for 10s, 1.6mm from case
Maximum junction-to-case thermal resistance RthJC1.0°C/W
Maximum junction-to-ambient thermal resistance RthJA62°C/W
Maximum junction-to-ambient thermal resistance on PCB mount40°C/W
Forward transconductance gfs8.7S min.
Input capacitance Cissapproximately 1700pF
Output capacitance Cossapproximately 560pF
Reverse transfer capacitance Crssapproximately 120pF
Total gate charge Qg72nC max @ VGS 10V
Gate-Source charge Qgs11nC max
Gate-Drain charge Qgd32nC max
Turn-on delay time td(on)approximately 11ns
Rise time trapproximately 44ns
Turn-off delay time td(off)approximately 53ns
Fall time tfapproximately 43ns
Gate input resistance Rg0.5 Ohm to 3.6 Ohm
Internal drain inductance LDapproximately 4.5nH
Internal source inductance LSapproximately 7.5nH
Body diode continuous source-drain current IS28A
Body diode pulsed forward current ISM110A
Body diode forward voltage VSDup to 2.5V
Body diode reverse recovery time trrapproximately 180ns typ., 360ns max
Body diode reverse recovery charge Qrrapproximately 1.3uC typ., 2.8uC max
Dynamic dv/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Surface-mount package
Lead-free PbF version
PackageD2PAK / TO-263
Mounting typeSMD / Surface Mount
Pin configurationGate, Drain, Source
Metal tabDrain
Suitable for switching applications
Suitable for DC-DC converters
Suitable for PWM and load driver circuits
Suitable for motor drivers with proper drive circuitry
Not a logic-level MOSFET
Not an IGBT
Not the same package as TO-220
Gate drive of approximately 10V is required for full enhancement
Proper PCB thermal design is required for power applications
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
UserID/Email:
Password: