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SKU: 801.023.0146

INFINEONIRFIZ 48NPBF

IRFIZ48N N-Channel Power MOSFET 55V 40A TO-220F FullPak Infineon
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Indicative retail price (incl. 24% VAT): 1,86 €

IRFIZ48N N-Channel HEXFET Power MOSFET 55V 40A TO-220F FullPak by International Rectifier / Infineon, suitable for power switching applications, DC loads, power supplies, inverters, motor control, lighting control and industrial electronic circuits.

The IRFIZ48N is an N-Channel HEXFET Power MOSFET originally from International Rectifier and now from Infineon. It features 55V Drain-Source voltage, continuous Drain current up to 40A and low RDS(on) of 16mOhm max with 10V gate drive. The TO-220 FullPak / TO-220F package is fully insulated, allowing easier heatsink mounting without additional mica insulation in many applications.

Technical description

The IRFIZ48N is suitable for use as a power switch in low-voltage DC applications, power converters, SMPS, motor controllers, LED drivers and battery charging or power management circuits. The fully insulated FullPak package provides high electrical isolation between the device and the heatsink, with 2.5kVRMS isolation and 4.8mm creepage distance.

Typical applications

Suitable for DC motor control, low-voltage inverters, switching power supplies, LED drivers, load switches, battery powered circuits, automation systems, PWM applications, robotics projects and general power switching circuits.

Compatibility note

The IRFIZ48N is the insulated FullPak / TO-220F version and is not mechanically identical to the standard IRFZ48N in TO-220 with metal tab. It is not a logic-level MOSFET. Full enhancement and low RDS(on) typically require approximately 10V gate drive.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerInternational Rectifier / Infineon
ModelIRFIZ48N
Recommended ordering codeIRFIZ48NPbF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / IR MOSFET
Maximum Drain-Source voltage VDS55V
Maximum continuous Drain current ID40A @ TC 25°C
Continuous Drain current ID29A @ TC 100°C
Pulsed Drain current IDMup to 210A
RDS(on)16mOhm max @ VGS 10V, ID 22A
Gate threshold voltage VGS(th)2V to 4V
Maximum Gate-Source voltage VGS+/-20V
Power dissipation PDup to 54W @ TC 25°C
Linear derating factor0.36W/°C
Single pulse avalanche energy EAS270mJ
Avalanche current IAR32A
Peak diode recovery dv/dt5.0V/ns
Total gate charge Qgup to 89nC
Gate-to-Source charge Qgsup to 20nC
Gate-to-Drain charge Qgdup to 39nC
Input capacitance Cissapproximately 1900pF
Output capacitance Cossapproximately 620pF
Reverse transfer capacitance Crssapproximately 270pF
Body diode forward voltage VSDup to 1.3V
Reverse recovery time trr94ns typ., 140ns max
Thermal resistance Junction-to-Case RthJCup to 2.8°C/W
Thermal resistance Junction-to-Ambient RthJAup to 65°C/W
Operating junction temperature-55°C to +175°C
Storage temperature-55°C to +175°C
PackageTO-220 FullPak / TO-220F
Package typefully insulated / isolated package
High voltage isolation2.5kVRMS
Sink to lead creepage distance4.8mm
Mounting typeTHT / Through Hole
TerminalsGate, Drain, Source
Fully avalanche rated
Lead-Free
RoHS compliant
Suitable for heatsink use
Not a logic-level MOSFET
Not mechanically identical to IRFZ48N TO-220 metal-tab version
Full enhancement typically requires approximately 10V gate drive
Suitable for DC motor control, SMPS, inverters, LED drivers and load switching
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
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