INFINEONIRF 634PBF

Infineon / International Rectifier IRF634PbF N-Channel HEXFET Power MOSFET 250V 8.1A TO-220AB, suitable for switching power supplies, DC-DC converters, PWM circuits, load drivers, industrial electronics and general high-voltage switching applications.

The IRF634 is an N-Channel Power MOSFET in a TO-220AB package, featuring 250V Drain-Source voltage, 8.1A continuous Drain current at 25°C and 0.45 Ohm max RDS(on) with 10V gate drive. HEXFET technology provides fast switching, avalanche ruggedness and simple drive requirements in power applications.

Technical description

The IRF634PbF is a power MOSFET for switching applications, with dynamic dv/dt rating, repetitive avalanche rating and paralleling capability in properly designed circuits. The TO-220AB package provides low thermal resistance and supports heatsink mounting for improved heat dissipation.

Typical applications

Suitable for switching power supplies, DC-DC converters, PWM circuits, load drivers, relay drivers, voltage converters, power electronics, industrial control circuits and applications requiring a 250V N-Channel MOSFET in TO-220 package.

Compatibility note

The IRF634 is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the TO-220AB package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. It is not a logic-level MOSFET, so proper gate drive, typically 10V, is required for full enhancement.

Weight: approximately 0.002 kg.