STMicroelectronicsIRF 630

STMicroelectronics IRF630 N-Channel Power MOSFET 200V 9A TO-220, suitable for switching power supplies, DC-DC converters, power converters, load control circuits, industrial electronics and general switching applications.

The IRF630 by STMicroelectronics is an N-Channel STripFET Power MOSFET in a TO-220 package. It features 200V Drain-Source voltage, 9A continuous Drain current at 25°C and 0.40 Ohm max RDS(on) with 10V gate drive. The TO-220 package allows heatsink mounting for improved thermal dissipation in power applications.

Technical description

The IRF630 is a power MOSFET for switching applications, featuring low input capacitance, minimized gate charge and high dv/dt ruggedness. Pin configuration is Gate on pin 1, Drain on pin 2 and metal tab, and Source on pin 3. Proper gate drive, typically 10V, is required for full enhancement.

Typical applications

Suitable for switching power supplies, DC-DC converters, industrial control circuits, load drivers, voltage converters, power electronics, PWM circuits and general applications requiring a 200V N-Channel MOSFET in TO-220 package.

Compatibility note

The IRF630 is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the TO-220 package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. It is not a logic-level MOSFET, so direct drive from 3.3V or 5V microcontrollers is not recommended without a suitable driver when full enhancement is required.

Weight: approximately 0.002 kg.