Bilin/Galaxy MicroelectronicsIRF 740

The BILIN IRF740 by Galaxy Microelectronics is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 400V and a continuous Drain current of up to 10A. It is supplied in a TO-220AB package and is suitable for high-voltage switching circuits, switch-mode power supplies, power converters and load-control applications.

Technical description

The IRF740 has a maximum RDS(on) on-state resistance of 0.55 Ohm when driven with a Gate-Source voltage of 10V. Its voltage-controlled gate requires a suitable driver circuit to ensure that the MOSFET switches fully into the conductive state.

The maximum permitted Gate-Source voltage is ±20V, while the typical Gate threshold voltage VGS(th) range is 2V to 4V. The threshold voltage is not the full turn-on voltage, and a gate drive of approximately 10V is recommended for power-switching applications.

The TO-220AB package allows the component to be mounted on a heatsink. A suitable heatsink must be used in high-current or high-power applications, together with electrical insulation between the MOSFET and the heatsink where required.

Typical applications

Suitable for SMPS power supplies, DC/DC converters, UPS systems, electronic ballasts, inverter circuits, load controllers, industrial power supplies and general high-voltage switching applications.

Compatibility note

Before replacing another MOSFET, verify the Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, switching speed, power dissipation, package and terminal configuration.

Weight: approximately 0.002 kg.