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SKU: 801.023.0241

INFINEONIRFU 024N

IRFU024N N-Channel Power MOSFET 55V 17A I-PAK TO-251AA Infineon
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Indicative retail price (incl. 24% VAT): 0,93 €

IRFU024N N-Channel HEXFET Power MOSFET 55V 17A I-PAK / TO-251AA by International Rectifier / Infineon, suitable for power switching applications, DC loads, power supplies, PWM control, automation circuits and electronic projects.

The IRFU024N is an N-Channel HEXFET Power MOSFET from International Rectifier, now Infineon, in an I-PAK / TO-251AA straight-lead through-hole package. It features 55V maximum Drain-Source voltage, continuous Drain current up to 17A and RDS(on) of 75mOhm max at VGS 10V. It is suitable for low and medium power applications requiring fast switching and reliable operation.

Technical description

The IRFU024N is used as an electronic switch in DC circuits, power supplies, PWM drivers, small motor controllers and load switching applications. The I-PAK / TO-251AA package is a straight-lead through-hole type and is mechanically different from the IRFR024N SMD version, which uses the D-PAK / TO-252 package. For higher current applications, thermal dissipation and PCB layout must be considered.

Typical applications

Suitable for DC motor control, PWM switching, LED drivers, power supplies, load switches, battery powered circuits, automation systems, electronic projects, small power converters and general DC load switching applications.

Compatibility note

The IRFU024N is an I-PAK / TO-251AA through-hole MOSFET and is not mechanically identical to TO-220 components. It should also not be confused with the IRFR024N, which is the SMD D-PAK version. It is not a logic-level MOSFET. Low RDS(on) and full enhancement typically require approximately 10V gate drive.

Weight: approximately 0.001 kg.



Package weight: 0,001kg
Package volumetric: 0,001kg
ManufacturerInternational Rectifier / Infineon
ModelIRFU024N
Recommended ordering codeIRFU024NPbF
Related SMD versionIRFR024NPbF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / IR MOSFET
Maximum Drain-Source voltage VDS55V
Maximum continuous Drain current ID17A @ TC 25°C
Continuous Drain current ID12A @ TC 100°C
Pulsed Drain current IDMup to 68A
RDS(on)75mOhm max @ VGS 10V, ID 10A
Gate threshold voltage VGS(th)2.0V to 4.0V
Maximum Gate-Source voltage VGS+/-20V
Power dissipation PDup to 45W @ TC 25°C
Linear derating factor0.30W/°C
Single pulse avalanche energy EAS71mJ
Avalanche current IAR10A
Repetitive avalanche energy EAR4.5mJ
Peak diode recovery dv/dt5.0V/ns
Total gate charge Qgup to 20nC
Gate-to-Source charge Qgsapproximately 5.3nC
Gate-to-Drain charge Qgdapproximately 7.6nC
Turn-on delay time td(on)approximately 4.9ns
Rise time trapproximately 34ns
Turn-off delay time td(off)approximately 19ns
Fall time tfapproximately 27ns
Input capacitance Cissapproximately 370pF
Output capacitance Cossapproximately 140pF
Reverse transfer capacitance Crssapproximately 65pF
Body diode continuous source current IS17A
Body diode pulsed source current ISM68A
Body diode forward voltage VSDup to 1.3V
Reverse recovery time trrapproximately 56ns typ., 83ns max
Reverse recovery charge Qrrapproximately 120nC typ., 180nC max
Thermal resistance Junction-to-Case RthJCup to 3.3°C/W
Thermal resistance Case-to-Ambient PCB mountup to 50°C/W
Thermal resistance Junction-to-Ambientup to 110°C/W
Operating junction temperature-55°C to +175°C
Storage temperature-55°C to +175°C
Soldering temperature300°C for 10 seconds, 1.6mm from case
PackageI-PAK / TO-251AA
Mounting typeTHT / Through Hole
TerminalsGate, Drain, Source
Straight lead version
Fully avalanche rated
Lead-Free
Suitable for DC motor control, PWM switching, LED drivers, power supplies and load switching
Not a TO-220 component
Not an SMD component
Not a logic-level MOSFET
Full enhancement typically requires approximately 10V gate drive
Approximate weight0.001 kg
Datasheets
Warranty / repair terms
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