INFINEONIRF 540NPBF

Infineon IRF540N / IRF540NPbF N-Channel HEXFET Power MOSFET 100V 33A TO-220AB, suitable for switching power supplies, DC-DC converters, motor drivers, PWM circuits, industrial electronics and general power switching applications.

The IRF540N by Infineon is an N-Channel HEXFET Power MOSFET in a TO-220AB package. It features 100V Drain-Source voltage, 33A continuous Drain current at 25°C and very low RDS(on) of 44mOhm max with 10V gate drive. HEXFET technology provides fast switching, low conduction losses and reliable operation in power applications.

Technical description

The IRF540NPbF is a power MOSFET for switching applications, with dynamic dv/dt rating, fast switching and fully avalanche rated design. The TO-220AB package supports heatsink mounting for improved thermal dissipation, while the pin configuration is Gate, Drain, Source, with the metal tab connected to Drain.

Typical applications

Suitable for switching power supplies, DC-DC converters, PWM circuits, motor and load drivers, voltage converters, power electronics, industrial control circuits and applications requiring a 100V N-Channel MOSFET in TO-220 package.

Compatibility note

The IRF540N is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the TO-220AB package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. It is not a logic-level MOSFET, so proper gate drive, typically 10V, is required for full enhancement.

Weight: approximately 0.002 kg.