INFINEONIRFB 3306GPBF

IRFB3306GPBF N-Channel HEXFET Power MOSFET 60V 160A TO-220 by International Rectifier / Infineon, suitable for power applications, synchronous rectification, SMPS, UPS, DC-DC converters, inverters and high-speed power switching.

The IRFB3306GPBF is an N-Channel HEXFET Power MOSFET from International Rectifier, now Infineon, in a TO-220AB package. It features 60V maximum Drain-Source voltage, continuous Drain current up to 160A silicon limited and 120A package limited, plus very low RDS(on) of 4.2mOhm max at VGS 10V. It is designed for high-efficiency applications requiring low conduction losses and fast switching.

Technical description

The IRFB3306GPBF is suitable for low-voltage power circuits such as high efficiency synchronous rectification, SMPS power supplies, UPS systems, DC-DC converters and electronic load switches. The low RDS(on) helps reduce power losses, while the TO-220AB package allows easy PCB mounting and heatsink use in applications with increased thermal requirements.

Typical applications

Suitable for high efficiency synchronous rectification, switching power supplies, uninterruptible power supplies, high speed power switching, hard switched converters, high frequency circuits, DC-DC converters, inverters, battery systems, PWM drivers, DC motor control and general power switching applications.

Compatibility note

The IRFB3306GPBF is not a logic-level MOSFET. Low RDS(on) and full enhancement typically require approximately 10V gate drive. Before replacement, verify VDS voltage, current rating, RDS(on), TO-220AB package, pin configuration and thermal requirements of the application.

Weight: approximately 0.002 kg.