INFINEONIRF 1405

The International Rectifier IRF1405 is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 55V and featuring very low on-state resistance. It is supplied in a TO-220AB package and is suitable for low-voltage, high-current applications such as motor controllers, UPS systems, power converters and electronic load switches.

Technical description

The IRF1405 features a maximum RDS(on) of 5.3mOhm with a Gate-Source drive voltage of 10V. Its very low on-state resistance helps reduce conduction losses and operating temperature in high-current applications.

The calculated continuous Drain current is rated up to 169A with the case maintained at 25°C under ideal cooling conditions. However, the practical current is limited by the TO-220 package to 75A. Actual current capability depends on the heatsink, ambient temperature, conductor size and operating conditions.

The Gate threshold voltage VGS(th) ranges from 2V to 4V, but this value indicates only the beginning of conduction. A suitable gate-driver circuit providing approximately 10V is required for full enhancement in power-switching applications.

HEXFET technology provides fast switching, high input impedance and improved repetitive avalanche capability. The TO-220AB package allows the component to be mounted on a suitable heatsink.

Typical applications

Suitable for DC motor controllers, UPS systems, low-voltage inverters, DC/DC converters, battery systems, chargers, electronic load switches, switch-mode power supplies and general high-current switching applications.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, practical current rating, RDS(on), gate charge, gate-drive voltage, switching speed, package and terminal configuration.

Weight: approximately 0.002 kg.