Bilin/Galaxy MicroelectronicsIRF 840

The BILIN IRF840 by Galaxy Microelectronics is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 500V and a continuous Drain current of up to 8A. It is supplied in a TO-220AB package and is suitable for switch-mode power supplies, power converters, inverter circuits and high-voltage switching applications.

Technical description

The IRF840 features a maximum RDS(on) on-state resistance of 0.85 Ohm with a Gate-Source drive voltage of 10V. Its relatively low on-state resistance helps reduce power losses and operating temperature during switching applications.

The Gate threshold voltage VGS(th) ranges from 2V to 4V. This value indicates only the beginning of conduction and does not represent the full turn-on voltage. A suitable gate-driver circuit, typically providing approximately 10V, is required for power-switching applications.

The device provides high input impedance, fast switching performance and operation in high-voltage circuits. Its TO-220AB package allows easy mounting on a heatsink for improved thermal dissipation.

Typical applications

Suitable for SMPS power supplies, DC/DC converters, inverter circuits, UPS systems, electronic ballasts, high-voltage power supplies, motor controllers and general switching of resistive or inductive loads.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, switching speed, maximum power dissipation, package and terminal configuration.

Weight: approximately 0.002 kg.