INFINEONIRF 640 NPBF

Infineon IRF640N / IRF640NPbF N-Channel HEXFET Power MOSFET 200V 18A TO-220AB, suitable for switching power supplies, DC-DC converters, PWM circuits, load drivers, industrial electronics and high-voltage switching applications.

The IRF640N by Infineon is an N-Channel HEXFET Power MOSFET in a TO-220AB package. It features 200V Drain-Source voltage, 18A continuous Drain current at 25°C and low RDS(on) of 0.15 Ohm max with 10V gate drive. HEXFET technology provides fast switching, fully avalanche rated design and reliable performance in power applications.

Technical description

The IRF640NPbF is a fifth-generation HEXFET power MOSFET designed for low on-resistance, fast switching, dynamic dv/dt rating and simple drive requirements. The TO-220AB package supports heatsink mounting for effective thermal dissipation, while the pin configuration is Gate, Drain, Source, with the metal tab connected to Drain.

Typical applications

Suitable for switching power supplies, DC-DC converters, PWM circuits, load switching, relay drivers, voltage converters, power electronics, industrial control circuits and applications requiring a 200V N-Channel MOSFET in TO-220 package.

Compatibility note

The IRF640N is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the TO-220AB package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. It is not a logic-level MOSFET, so proper gate drive, typically 10V, is required for full enhancement.

Weight: approximately 0.002 kg.