STMicroelectronicsSTP 4N150

Name: STMicroelectronics STP 4N150
Brand: STMicroelectronics
SKU: 801.004.0638
Price: 9.67 EUR
Availability: InStock

STMicroelectronics STP4N150 N-Channel Power MOSFET 1500V 4A TO-220

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Indicative retail price (incl. 24% VAT): 9,67 €

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The STP4N150 from STMicroelectronics is a very high-voltage N-Channel Power MOSFET designed for power switching applications. With a 1500V drain-source voltage rating and 4A continuous drain current, it is suitable for circuits requiring high voltage capability and reliable operation in demanding power supply and industrial applications. The device is based on STMicroelectronics PowerMESH™ / MESH OVERLAY™ technology, providing improved switching performance, minimized intrinsic capacitances and reduced gate charge. It is 100% avalanche tested, which is important for switching applications involving inductive loads and transient conditions. The TO-220 / TO-220-3 package supports through-hole mounting and effective thermal dissipation when used with an appropriate heatsink.

Package weight: 0,002kg
Package volumetric: 0,002kg

ManufacturerSTMicroelectronics

Manufacturer part numberSTP4N150

Product typePower MOSFET

Polarity / channelN-Channel

TechnologyPowerMESH™ / MESH OVERLAY™

Drain-source voltage VDS1500V

Continuous drain current ID4A

Drain-source on-resistance RDS(on)5Ω typ. / 7Ω max.

RDS(on) test conditionsVGS = 10V, ID = 2A

Gate-source voltage VGS±30V max.

Gate threshold voltage VGS(th)3V to 5V

Power dissipation PD160W