Bilin/Galaxy MicroelectronicsIRF 730

The Bilin / Galaxy Microelectronics IRF730 is a high-voltage N-Channel power MOSFET in a TO-220 package, rated for up to 400V Drain-Source voltage, 5.5A continuous Drain current and 1.0 Ohm maximum RDS(on). It is suitable for switching and power-conversion applications requiring a 400V-class MOSFET.

Technical description

The IRF730 is an enhancement-mode N-Channel power MOSFET designed for high-voltage applications. Maximum Drain-Source voltage VDS is 400V and continuous Drain current ID is rated up to 5.5A under the specified thermal conditions. Maximum RDS(on) is 1.0 Ohm at VGS=10V, while Gate threshold voltage VGS(th) is specified in the 2V to 4V range. Maximum allowable Gate-Source voltage is ±20V.

The TO-220 package is suitable for through-hole mounting and allows heatsink installation when required by the thermal design. Viewed from the front of the device, the terminal arrangement is Gate - Drain - Source, while the metal tab is electrically connected to the Drain. The MOSFET incorporates the intrinsic body diode typical of this class of power MOSFET.

Typical applications

Suitable for switching power supplies, SMPS, DC-DC converters, inverter stages, high-voltage switching, relay and solenoid drivers, industrial power control, motor-control stages and general power-electronics applications.

Compatibility note

IRF730 replacement should not be based only on VDS and ID ratings. RDS(on), VGS(th), maximum VGS, gate charge, input/output capacitances, switching times, Safe Operating Area, avalanche capability, thermal resistance, package and pinout should also be verified. IRF730 devices from different manufacturers may have different dynamic and thermal characteristics even when their basic ratings are similar.

Frequently asked questions

What type of device is the IRF730?
It is a high-voltage N-Channel enhancement-mode power MOSFET.

What is the maximum Drain-Source voltage?
Maximum VDS is 400V.

What is the continuous Drain current?
Up to 5.5A under the specified thermal conditions.

What is the maximum RDS(on)?
1.0 Ohm at VGS=10V.