INFINEONIRFB 4110PBF

IRFB4110G N-Channel HEXFET Power MOSFET 100V TO-220 by International Rectifier / Infineon, suitable for power applications, SMPS, UPS, DC-DC converters, inverters, PWM switching and high-speed power switching circuits.

The IRFB4110G is an N-Channel HEXFET Power MOSFET from International Rectifier, now Infineon, in a TO-220AB / TO-220 package. It features 100V maximum Drain-Source voltage and very low RDS(on) of 4.5mOhm max at VGS 10V. It is designed for high-efficiency applications requiring low conduction losses, high current capability and fast switching.

Technical description

The IRFB4110G is suitable for low and medium voltage power circuits, such as synchronous rectification, SMPS power supplies, UPS systems, DC-DC converters and electronic load switches. The TO-220 package allows PCB mounting and heatsink use in applications with increased thermal requirements.

Typical applications

Suitable for high efficiency synchronous rectification, uninterruptible power supplies, high speed power switching, hard switched converters, high frequency circuits, DC-DC converters, inverters, battery systems, PWM drivers, DC motor control and general power switching applications.

Compatibility note

The IRFB4110G is not a logic-level MOSFET. Low RDS(on) and full enhancement typically require approximately 10V gate drive. Before replacement, verify VDS voltage, current rating, RDS(on), TO-220 package, pin configuration and thermal requirements of the application.

Weight: approximately 0.002 kg.