STMicroelectronics STW 35N65M5 - STMicroelectronics STW35N65M5 N-Channel Power MOSFET 650V 27A TO-247

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SKU: 801.023.0159

STMicroelectronicsSTW 35N65M5

STMicroelectronics STW35N65M5 N-Channel Power MOSFET 650V 27A TO-247
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Indicative retail price (incl. 24% VAT): 13,05 €
The STW35N65M5 from STMicroelectronics is a high-voltage N-Channel Power MOSFET based on MDmesh M5 technology, supplied in a TO-247-3 through-hole package. It is designed for power switching applications requiring high efficiency, low on-resistance and reliable thermal performance. The device features 650V drain-source voltage, 27A continuous drain current, 108A pulsed drain current and 98mΩ maximum RDS(on) at VGS = 10V. The TO-247 package is suitable for heatsink-mounted power electronics applications such as SMPS, PFC stages, inverters and industrial power supplies.
For full specs, view the PDF file.

Package weight: 0,001kg
Package volumetric: 0,001kg
ManufacturerSTMicroelectronics
Product codeSTW35N65M5
TypePower MOSFET
Channel typeN-Channel
TechnologyMDmesh M5
PolarityEnhancement mode
PackageTO-247-3
Mounting typeThrough-hole
Drain-source voltage VDS650V
Continuous drain current ID27A at TC = 25°C
Continuous drain current ID17A at TC = 100°C
Pulsed drain current IDM108A
Maximum drain-source on-resistance RDS(on)98mΩ
Typical drain-source on-resistance RDS(on)85mΩ
RDS(on) test conditionsVGS = 10V, ID = 13.5A
Gate-source voltage VGS±25V
Gate threshold voltage VGS(th)3V to 5V
Total gate charge Qg83nC typ.
Input capacitance Ciss3750pF typ.
Output capacitance Coss84pF typ.
Reverse transfer capacitance Crss5.5pF typ.
Maximum power dissipation PTOT160W at TC = 25°C
Thermal resistance junction-to-case RthJC0.78°C/W
Maximum junction temperature TJ150°C
Storage temperature range-55°C to +150°C
Feature100% avalanche tested
Pinout1 Gate, 2 Drain / Tab, 3 Source
PackagingTube
Datasheets
PDF datasheet
Warranty / repair terms
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