INFINEONIRF 520

Infineon IRF520NPbF / IRF520N N-Channel HEXFET Power MOSFET 100V 9.7A TO-220AB, suitable for switching power supplies, DC-DC converters, PWM circuits, load drivers, industrial electronics and general power switching applications.

The IRF520 by Infineon is an N-Channel HEXFET Power MOSFET in a TO-220AB package. It features 100V Drain-Source voltage, 9.7A continuous Drain current at 25°C and 0.20 Ohm max RDS(on) with 10V gate drive. HEXFET technology provides fast switching, avalanche ruggedness and reliable operation in power applications.

Technical description

The IRF520NPbF is a power MOSFET for switching applications, with dynamic dv/dt rating, fast switching and fully avalanche rated design. The TO-220AB package supports heatsink mounting for improved thermal dissipation, while the pin configuration is Gate, Drain, Source, with the metal tab connected to Drain.

Typical applications

Suitable for switching power supplies, DC-DC converters, PWM circuits, motor and load drivers, voltage converters, power electronics, laboratory projects and applications requiring a 100V N-Channel MOSFET in TO-220 package.

Compatibility note

The IRF520 is an N-Channel MOSFET and not an IGBT, TRIAC or thyristor. Before replacement, verify the TO-220AB package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. It is not a logic-level MOSFET, so proper gate drive, typically 10V, is required for full enhancement.

Weight: approximately 0.002 kg.