MitsubishiRD06HVF1-501

6W RF Power MOSFET transistor for VHF applications up to 175MHz, specifically designed for RF power amplifier output stages. The Mitsubishi RD06HVF1-501 provides high power gain and is suitable for transmitters, mobile radio equipment and other VHF RF amplification applications.

Technical description

The RD06HVF1 is a Mitsubishi Electric silicon RF power MOSFET specifically designed for VHF power amplifiers. Under the specified test conditions of VDD 12.5V and 175MHz, it can provide more than 6W RF output power with a power gain greater than 13dB.

Maximum drain-to-source voltage is 50V, maximum gate-to-source voltage is ±20V and maximum drain current is 3A. Maximum channel dissipation at 25°C is 27.8W.

Typical applications

Suitable for RF amplifier output stages, VHF transmitters, mobile and portable radio equipment, amateur radio applications and RF equipment repair where the specified transistor or an electrically compatible device is required.

Compatibility note

Before replacement, verify pinout, operating voltage, frequency range, required RF output power and thermal conditions. The RD06HVF1 is a dedicated RF power MOSFET and should not be selected as a general-purpose MOSFET based only on voltage or current ratings.

Frequently asked questions

What is the Mitsubishi RD06HVF1-501?
It is a silicon RF Power MOSFET specifically designed for VHF RF power amplification.

How much RF output power can it deliver?
The datasheet specifies more than 6W output power at 175MHz with a 12.5V supply under the stated test conditions.

What frequency is the RD06HVF1 designed for?
It is intended for VHF applications, with its main rated RF performance specified at 175MHz.

Can it be used in VHF transmitters?
Yes. The manufacturer specifies it for output stages of high-power amplifiers in VHF mobile radio equipment.

What is the maximum drain-to-source voltage?
The maximum VDS rating is 50V.

Is it a general-purpose MOSFET?
No. It is a specialised RF power MOSFET and should be selected according to the RF, electrical and thermal requirements of the circuit.