MitsubishiRD 15HVF1

RD15HVF1 15W RF Power MOSFET from Mitsubishi Electric for VHF/UHF high-frequency power amplifiers. It is specifically designed for transmitter output stages and RF power amplifiers, with rated performance at 175MHz and 520MHz using a 12.5V test supply.

Technical description

The Mitsubishi RD15HVF1 is a silicon RF power MOSFET designed for high-power VHF and UHF applications. At 175MHz it delivers at least 15W output power with more than 14dB power gain, while at 520MHz it also delivers at least 15W with more than 7dB gain.

Typical drain efficiency is 60% in the VHF band and 55% in the UHF band. Maximum Drain-Source voltage is 30V, maximum Gate-Source voltage is ±20V and maximum Drain current is 4A.

Typical applications

Suitable for RF amplifier output stages, VHF/UHF transmitters, mobile and portable radio equipment, amateur radio applications and RF equipment repair requiring the specified Mitsubishi RD15HVF1 device.

Compatibility note

Before replacement, verify pinout, operating voltage, frequency, required RF output power, matching network and thermal conditions. The RD15HVF1 is a dedicated RF power MOSFET and should not be treated as a general-purpose MOSFET.

Frequently asked questions

What is the Mitsubishi RD15HVF1?
It is a silicon RF Power MOSFET specifically designed for high-power VHF and UHF amplifier output stages.

How much output power does the RD15HVF1 provide?
The datasheet specifies at least 15W output power at both 175MHz and 520MHz under the stated test conditions.

What frequencies is it designed for?
Mitsubishi specifies its RF performance at 175MHz for VHF and 520MHz for UHF applications.

What supply voltage is used for the rated RF performance?
The main output power specifications are measured at VDD 12.5V.

What is the maximum Drain-Source voltage?
The maximum VDSS rating is 30V.

Can it be used as a general-purpose power MOSFET?
It should not be selected as a general-purpose replacement. It is a specialised RF power MOSFET intended for high-frequency circuits.

RD15HVF1 15W RF Power MOSFET from Mitsubishi Electric for VHF/UHF high-frequency power amplifiers. It is specifically designed for transmitter output stages and RF power amplifiers, with rated performance at 175MHz and 520MHz using a 12.5V test supply.

Technical description

The Mitsubishi RD15HVF1 is a silicon RF power MOSFET designed for high-power VHF and UHF applications. At 175MHz it delivers at least 15W output power with more than 14dB power gain, while at 520MHz it also delivers at least 15W with more than 7dB gain.

Typical drain efficiency is 60% in the VHF band and 55% in the UHF band. Maximum Drain-Source voltage is 30V, maximum Gate-Source voltage is ±20V and maximum Drain current is 4A.

Typical applications

Suitable for RF amplifier output stages, VHF/UHF transmitters, mobile and portable radio equipment, amateur radio applications and RF equipment repair requiring the specified Mitsubishi RD15HVF1 device.

Compatibility note

Before replacement, verify pinout, operating voltage, frequency, required RF output power, matching network and thermal conditions. The RD15HVF1 is a dedicated RF power MOSFET and should not be treated as a general-purpose MOSFET.

Frequently asked questions

What is the Mitsubishi RD15HVF1?
It is a silicon RF Power MOSFET specifically designed for high-power VHF and UHF amplifier output stages.

How much output power does the RD15HVF1 provide?
The datasheet specifies at least 15W output power at both 175MHz and 520MHz under the stated test conditions.

What frequencies is it designed for?
Mitsubishi specifies its RF performance at 175MHz for VHF and 520MHz for UHF applications.

What supply voltage is used for the rated RF performance?
The main output power specifications are measured at VDD 12.5V.

What is the maximum Drain-Source voltage?
The maximum VDSS rating is 30V.

Can it be used as a general-purpose power MOSFET?
It should not be selected as a general-purpose replacement. It is a specialised RF power MOSFET intended for high-frequency circuits.