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SKU: 801.003.1509

INFINEONIRGP 4068DPBF

IRGP4068D IGBT 600V 96A TO-247 International Rectifier / Infineon
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Indicative retail price (incl. 24% VAT): 10,54 €

IRGP4068D N-Channel IGBT 600V 96A TO-247 by International Rectifier / Infineon, suitable for power applications, induction heating, soft switching, inverters, SMPS and high-efficiency switching circuits.

The IRGP4068D is a Trench IGBT power device from International Rectifier, now Infineon, with an integrated ultra-low VF hyperfast diode. It features 600V Collector-Emitter voltage, continuous Collector current up to 96A at 25°C and 48A at 100°C, plus low saturation voltage VCE(on) typically 1.65V. It is designed for high efficiency in induction heating and soft switching applications where low losses, ruggedness and reliable operation are required.

Technical description

The IRGP4068D combines an IGBT with a fast integrated diode, making it suitable for power switching circuits requiring fast recovery and low diode forward voltage. The 175°C maximum junction temperature, 5us short-circuit capability and square RBSOA support reliable operation in demanding industrial applications.

Typical applications

Suitable for induction heating, soft switching converters, inverters, SMPS power supplies, industrial power converters, heating systems, power switching, high-frequency circuits and applications requiring a low-loss IGBT with integrated fast diode.

Compatibility note

The IRGP4068D is an IGBT, not a MOSFET. Gate drive is typically 15V VGE for correct operation in power applications. Before replacement, verify the package, pin configuration, integrated diode requirement, voltage, current and cooling requirements of the circuit.

Weight: approximately 0.006 kg.



Package weight: 0,006kg
Package volumetric: 0,006kg
ManufacturerInternational Rectifier / Infineon
ModelIRGP4068D
Related part numbersIRGP4068DPBF / IRGP4068D-EPBF
Product typePower IGBT
Polarity / typeN-Channel IGBT
Integrated diodeUltra-low VF hyperfast diode
TechnologyLow VCE(on) Trench IGBT
Maximum Collector-Emitter voltage VCES600V
Continuous Collector current IC96A @ TC 25°C
Continuous Collector current IC48A @ TC 100°C
Pulsed Collector current ICMup to 144A
Clamped inductive load current ILMup to 192A
VCE(on)1.65V typ., 2.14V max @ IC 48A, VGE 15V, TJ 25°C
Gate threshold voltage VGE(th)4.0V to 6.5V
Maximum continuous Gate-Emitter voltage VGE±20V
Maximum transient Gate-Emitter voltage±30V
Power dissipation PDup to 330W @ TC 25°C
Power dissipation PDup to 170W @ TC 100°C
Operating junction temperature-55°C to +175°C
Storage temperature-55°C to +175°C
Short-circuit SOAat least 5us
Reverse Bias Safe Operating AreaSquare RBSOA
Total gate charge Qgapproximately 95nC typ., up to 140nC
Input capacitance Ciesapproximately 3025pF
Output capacitance Coesapproximately 245pF
Reverse transfer capacitance Cresapproximately 90pF
Diode forward voltage VFMapproximately 0.96V typ., 1.05V max @ IF 8A
Thermal resistance Junction-to-Case IGBTup to 0.45°C/W
PackageTO-247AC / TO-247AD, depending on version
Mounting typeTHT / Through Hole
TerminalsGate, Collector, Emitter
Suitable for heatsink use
Lead Free Package
Suitable for induction heating, soft switching, inverters and SMPS
Not a MOSFET
Proper IGBT gate driver is required for full operation
Approximate weight0.006 kg
Warranty / repair terms
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