INFINEONG50H603

The Infineon IGW50N60H3FKSA1 TRENCHSTOP HighSpeed 3 IGBT 600V 50A 333W TO-247-3 is a third-generation high-speed power IGBT based on Infineon TRENCHSTOP / Trench and Fieldstop technology, designed for high-frequency hard-switching applications with low switching and conduction losses.

Technical description

The IGW50N60H3 has a maximum collector-emitter voltage VCE of 600V and continuous collector current IC up to 50A at TC=100°C, while the absolute IC rating at TC=25°C is 100A. Pulsed collector current reaches 200A. Typical VCE(sat) is 1.85V at 50A with VGE=15V and Tj=25°C. Maximum power dissipation is 333W at TC=25°C and maximum junction temperature is +175°C. HighSpeed 3 technology is optimized for switching frequencies of approximately 20-100kHz, low EMI and fast turn-off behaviour.

Indicative applications

Suitable for photovoltaic inverters, UPS systems, welding converters, high-frequency DC/AC converters, industrial power supplies and other power-electronics applications requiring a 600V high-speed IGBT with low switching losses.

Compatibility note

For replacement, verify the 600V VCE rating, required collector current, gate-drive conditions, PG-TO247-3 package and thermal design. The 100A value is the absolute maximum IC rating at TC=25°C, while Infineon characterizes the device as 50A at TC=100°C. The current product status is Not for New Design, so an active newer Infineon alternative should be considered for new designs.