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SKU: 801.999.0001
Toshiba2SK 1930
Toshiba 2SK1930 N-Channel MOSFET 1000V 4A 100W
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Indicative retail price (incl. 24% VAT): 8,31 €
The Toshiba 2SK1930 is a high-voltage N-Channel power MOSFET designed for switching applications such as chopper regulators, DC-DC converters and motor drive circuits. It features 1000V drain-source voltage, 4A continuous drain current and 100W power dissipation at Tc=25°C. Typical RDS(on) is 3.0Ω at VGS=10V and ID=2A.
Package weight: 0,001kg
Package volumetric: 0,001kg
Package weight: 0,001kg
Package volumetric: 0,001kg
ManufacturerToshiba
Part number2SK1930
TypeN-Channel power MOSFET
CaseToshiba 2-10S2B
Support typeThrough-hole power package
Number of pins 3 pins
Pinout1 Gate, 2 Drain / Heat Sink, 3 Source
TechnologySilicon N-Channel MOS, π-MOSII.5
Drain-source voltage VDSS1000V
Drain-gate voltage VDGR1000V
Gate-source voltage VGSS±20V
Continuous drain current ID4A
Pulsed drain current IDP12A
Power dissipation PD100W at Tc=25°C
RDS(on)3.0Ω typ., 3.8Ω max. at VGS=10V, ID=2A
Gate threshold voltage Vth1.5V to 3.5V
Forward transfer admittance |Yfs|2.0S typ.
Drain cut-off current IDSS300μA max. at VDS=800V
Input capacitance Ciss700pF typ.
Reverse transfer capacitance Crss55pF typ.
Output capacitance Coss100pF typ.
Total gate charge Qg60nC typ.
Rise time tr18ns typ.
Turn-on time ton30ns typ.
Fall time tf12ns typ.
Turn-off time toff70ns typ.
Channel temperature Tchup to 150°C
Storage temperature range-55°C to +150°C
Thermal resistance channel-case Rth(ch-c)1.25°C/W max.
Datasheet packageToshiba 2-10S1B / 2-10S2B
Pin configuration1 Gate, 2 Drain / Heat Sink, 3 Source
MarkingK1930
Applicationschopper regulators, DC-DC converters, motor drive circuits
Datasheets
N. Plastira 257, Agioi Anargyroi, Attica, Greece
Monday-Friday: 08:00 - 17:00
Saturday: 08:00 - 15:00
+30 210 2620250 | info@tridimas.gr
Monday-Friday: 08:00 - 17:00
Saturday: 08:00 - 15:00
+30 210 2620250 | info@tridimas.gr
