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SKU: 806.020.0064

VishayST 180S16POV

ST180S16P0V Phase Control Thyristor SCR 1600V 200A Stud TO-93
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Indicative retail price (incl. 24% VAT): 136,40 €

ST180S16P0V 1600V 200A stud-mount phase control thyristor / SCR in TO-93 package, suitable for industrial rectifiers, controlled DC power supplies, AC power controllers, DC motor controls and high-current phase control applications.

The ST180S16P0V is an industrial power thyristor / SCR from the ST180S series, supplied in a TO-209AB / TO-93 stud-mount package. It features 200A average on-state current IT(AV), 314A RMS on-state current IT(RMS) and 1600V maximum repetitive peak off-state and reverse voltage for voltage code 16. The hermetic metal case with ceramic insulator and compression bonded construction make it suitable for heavy-duty industrial operation and severe thermal cycling.

Technical description

The ST180S16P0V is a stud-type phase control thyristor designed for power control at low frequencies, mainly around mains frequency. It features center amplifying gate construction, high surge current capability, controlled conduction in rectifier and regulator circuits and a threaded stud package for strong mechanical and thermal coupling to a heatsink.

Typical applications

Suitable for DC motor controls, controlled DC power supplies, AC controllers, industrial rectifiers, high-power battery chargers, welding equipment, power regulators, heating load controllers and general SCR controlled rectification applications.

Compatibility note

The ST180S16P0V is a thyristor / SCR and not a diode, TRIAC, IGBT or MOSFET. Before replacement, verify the exact part number, 1600V voltage rating, 200A current rating, stud polarity, gate / auxiliary cathode lead type, thread type, cooling, mounting torque and gate drive circuit. The V marking on the body and ceramic ring construction should be checked against the physical device and the datasheet of the exact version.

Weight: approximately 0.280 kg.



Package weight: 0,280kg
Package volumetric: 0,280kg
ManufacturerVishay Semiconductors
Related current seriesVS-ST180S, depending on version
ModelST180S16P0V
Correct part number writingST180S16P0V with zero after P
SeriesST180S
Product typePhase control power thyristor / SCR
Package typestud-mount
Case styleTO-209AB / TO-93
ConfigurationSingle SCR
Voltage code16
Maximum repetitive peak off-state voltage VDRM1600V
Maximum repetitive peak reverse voltage VRRM1600V
Maximum non-repetitive peak voltage VRSM1700V
Maximum average on-state current IT(AV)200A
IT(AV) condition180° conduction, half sine wave, TC 85°C
Maximum RMS on-state current IT(RMS)314A
IT(RMS) conditionDC, TC 76°C
Maximum peak one-cycle non-repetitive surge current ITSM5000A @ 50Hz, 10ms, no voltage reapplied
Maximum peak one-cycle non-repetitive surge current ITSM5230A @ 60Hz, 8.3ms, no voltage reapplied
Surge current with 100% VRRM reapplied4200A @ 50Hz, 10ms
Surge current with 100% VRRM reapplied4400A @ 60Hz, 8.3ms
Maximum I2t for fusing125kA2s @ 50Hz, 10ms, no voltage reapplied
Maximum I2t for fusing114kA2s @ 60Hz, 8.3ms, no voltage reapplied
Maximum on-state voltage VTM1.75V @ Ipk 570A, Tj 125°C
Low level threshold voltage VT(TO)1approximately 1.08V
High level threshold voltage VT(TO)2approximately 1.14V
Low level on-state slope resistance rt1approximately 1.18mOhm
High level on-state slope resistance rt2approximately 1.14mOhm
Maximum holding current IH600mA
Latching current IL1000mA max, 300mA typ.
Maximum critical rate of rise of off-state voltage dV/dt500V/us
Maximum non-repetitive rate of rise of turned-on current di/dt1000A/us
Typical delay time tdapproximately 1.0us
Typical turn-off time tqapproximately 100us
Maximum peak gate power PGM10W
Maximum average gate power PG(AV)2.0W
Maximum peak positive gate current IGM3.0A
Maximum peak positive gate voltage +VGM20V
Maximum peak negative gate voltage -VGM5.0V
Gate trigger current IGT150mA max @ Tj 25°C
Gate trigger current IGTapproximately 90mA typ. @ Tj 25°C
Gate trigger voltage VGT3.0V max @ Tj 25°C
Gate trigger voltage VGTapproximately 1.8V typ. @ Tj 25°C
Gate current not to trigger IGD10mA
Gate voltage not to trigger VGD0.25V
Operating junction temperature Tj-40°C to +125°C
Storage temperature Tstg-40°C to +150°C
Thermal resistance junction-to-case RthJC0.105K/W, DC operation
Thermal resistance case-to-heatsink RthCS0.04K/W, smooth flat greased surface
Mounting torque non-lubricated threads31Nm
Mounting torque lubricated threads24.5Nm
Approximate weight280g
Constructionhermetic metal case with ceramic insulator
Gatecenter amplifying gate
Encapsulationcompression bonded for heavy-duty operation
Suitable for severe thermal cycling
Typical applicationsDC motor controls
Typical applicationscontrolled DC power supplies
Typical applicationsAC controllers
Not a diode
Not a TRIAC
Not an IGBT or MOSFET
Proper heatsinking and correct stud mounting torque are required
Proper gate drive circuit is required
Approximate weight0.280 kg
Datasheets
Warranty / repair terms
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