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Silan SVT 20240NT - Silan SVT20240NT N-Channel Power MOSFET 200V 72A TO-220

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SKU: 801.079.0001

SilanSVT 20240NT

Silan SVT20240NT N-Channel Power MOSFET 200V 72A TO-220

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Indicative retail price (incl. 24% VAT): 4,34 €

Description
Specifications
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The SVT20240NT from Silan Microelectronics is an N-Channel Power MOSFET based on LVMOS technology, supplied in a TO-220-3L through-hole package. It is designed for high-current power switching applications requiring low on-state resistance and fast switching performance. The device features 200V drain-source voltage, 72A continuous drain current at TC = 25°C, 288A pulsed drain current and 19.7mΩ typical RDS(on) at VGS = 10V and ID = 46A. The TO-220-3L SVT20240NT version is rated for 263W power dissipation and has 0.57°C/W junction-to-case thermal resistance.

For full specs, view the PDF file.

Package weight: 0,006kg
Package volumetric: 0,001kg

ManufacturerSilan Microelectronics

Product codeSVT20240NT

FamilySVT20240N

TypePower MOSFET

Channel typeN-Channel

TechnologyLVMOS

PolarityEnhancement mode

PackageTO-220-3L

Mounting typeThrough-hole

Marking20240NT

Drain-source voltage VDS200V

Gate-source voltage VGS±30V

Continuous drain current ID72A at TC = 25°C

Continuous drain current ID51A at TC = 100°C

Pulsed drain current IDM288A

Typical drain-source on-resistance RDS(on)19.7mΩ

RDS(on) test conditionsVGS = 10V, ID = 46A

Gate threshold voltage VGS(th)3V to 5V

Total gate charge Qg88nC typ.

Gate-source charge Qgs30nC typ.

Gate-drain charge Qgd33nC typ.

Input capacitance Ciss4434pF typ.

Output capacitance Coss459pF typ.

Reverse transfer capacitance Crss182pF typ.

Turn-on delay time td(on)28ns typ.

Rise time tr44ns typ.

Turn-off delay time td(off)48ns typ.

Fall time tf23ns typ.

Maximum power dissipation PD263W at TC = 25°C

Thermal resistance junction-to-case RθJC0.57°C/W

Thermal resistance junction-to-ambient RθJA62.5°C/W

Single pulsed avalanche energy EAS221mJ

Source-drain diode current IS72A

Source-drain diode pulsed current ISM288A

Diode forward voltage VSD1.3V max.

Reverse recovery time trr105ns typ.

Reverse recovery charge Qrr0.44μC typ.

Operating junction temperature TJ-55°C to +175°C

Storage temperature range-55°C to +175°C

Pinout1 Gate, 2 Drain, 3 Source

PackagingTube

Datasheets

Warranty / repair terms

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