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SKU: 801.024.0032

INFINEONIGW50N60TP/G50T60

Infineon IGW50N60T IGBT 600V 50A TO-247
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Indicative retail price (incl. 24% VAT): 6,20 €

Infineon IGW50N60T / G50T60 IGBT 600V 50A TO-247 TRENCHSTOP, suitable for frequency converters, UPS systems, inverters, power supplies, industrial electronics and high-voltage applications requiring a low-loss IGBT.

The IGW50N60T by Infineon is a low-loss IGBT using TRENCHSTOP and Fieldstop technology in a PG-TO247-3 / TO-247 package, with body marking G50T60. It features 600V Collector-Emitter voltage, 50A current class, very low VCE(sat) of 1.5V typ. and maximum junction temperature of 175°C.

Technical description

The IGW50N60T is designed for 600V power applications requiring high switching speed, low VCE(sat), positive temperature coefficient and low EMI. It supports 5us short circuit withstand time, pulsed collector current up to 150A and power dissipation up to 333W with proper cooling. The TO-247 package provides strong thermal dissipation for high-current power applications.

Typical applications

Suitable for frequency converters, UPS systems, inverters, motor drives, industrial power supplies, power converters, welding equipment, high-voltage circuits and general power switching applications requiring a 600V IGBT in TO-247 package.

Compatibility note

The IGW50N60T is an IGBT, not a MOSFET. Before replacement, verify the TO-247 package, Gate / Collector / Emitter pin configuration, VCE voltage, IC current, VCE(sat), gate charge, presence or absence of an external freewheel diode in the circuit and thermal requirements of the application. Proper gate drive, typically 15V, is required for correct operation.

Weight: approximately 0.006 kg.



Package weight: 0,006kg
Package volumetric: 0,006kg
ManufacturerInfineon Technologies
ModelIGW50N60T
Body markingG50T60
Product typePower IGBT
SeriesTRENCHSTOP
TechnologyTRENCHSTOP and Fieldstop
ConfigurationSingle IGBT
Collector-Emitter voltage VCE600V
Current class50A
DC collector current ICup to 90A @ TC 25°C, bondwire limited
DC collector current ICup to 64A @ TC 100°C
Pulsed collector current IC pulseup to 150A
Turn-off safe operating areaup to 150A @ VCE 600V, Tj 175°C, tp 1us
Collector-Emitter saturation voltage VCE(sat)1.5V typ. @ IC 50A, VGE 15V, Tj 25°C
Collector-Emitter saturation voltage VCE(sat)2.0V max @ IC 50A, VGE 15V, Tj 25°C
Collector-Emitter saturation voltage VCE(sat)1.9V typ. @ IC 50A, VGE 15V, Tj 175°C
Gate-Emitter threshold voltage VGE(th)4.1V to 5.7V
Maximum Gate-Emitter voltage VGE+/-20V
Recommended gate drivetypically 15V
Short circuit withstand time5us @ VGE 15V, VCC up to 400V, Tj up to 150°C
Power dissipation Ptotup to 333W @ TC 25°C
Thermal resistance Junction-to-Case RthJCup to 0.45K/W
Thermal resistance Junction-to-Ambient RthJAup to 40K/W
Transconductance gfsapproximately 31S
Input capacitance Cissapproximately 3140pF
Output capacitance Cossapproximately 200pF
Reverse transfer capacitance Crssapproximately 93pF
Total gate charge Qgateapproximately 310nC @ VCC 480V, IC 50A, VGE 15V
Turn-on delay time td(on)approximately 26ns @ Tj 25°C
Rise time trapproximately 29ns @ Tj 25°C
Turn-off delay time td(off)approximately 299ns @ Tj 25°C
Fall time tfapproximately 29ns @ Tj 25°C
Turn-on energy Eonapproximately 1.2mJ @ Tj 25°C
Turn-off energy Eoffapproximately 1.4mJ @ Tj 25°C
Total switching energy Etsapproximately 2.6mJ @ Tj 25°C
Turn-on delay time td(on)approximately 27ns @ Tj 175°C
Rise time trapproximately 33ns @ Tj 175°C
Turn-off delay time td(off)approximately 341ns @ Tj 175°C
Fall time tfapproximately 55ns @ Tj 175°C
Turn-on energy Eonapproximately 1.8mJ @ Tj 175°C
Turn-off energy Eoffapproximately 1.8mJ @ Tj 175°C
Total switching energy Etsapproximately 3.6mJ @ Tj 175°C
Low VCE(sat)
Low gate charge
Low EMI
Positive temperature coefficient in VCE(sat)
High switching speed
High ruggedness for 600V applications
Operating junction temperature-40°C to +175°C
Storage temperature-55°C to +150°C
Soldering temperatureup to 260°C for 10s, 1.6mm from case
PackagePG-TO247-3 / TO-247
Mounting typeTHT / Through Hole
TerminalsGate, Collector, Emitter
RoHS compliant
Pb-free lead plating
Suitable for frequency converters, UPS systems, inverters, motor drives and industrial power supplies
Not a MOSFET
Not a TRIAC or thyristor
For replacement, pinout, gate drive, cooling and circuit freewheel diode must be checked
Approximate weight0.006 kg
Datasheets
User manuals
Warranty / repair terms
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