INFINEONIRFB 3206PBF

The Infineon IRFB3206PBF is a 60V N-Channel power MOSFET in TO-220AB package, featuring very low RDS(on) up to 3.0mΩ and 300W power dissipation, suitable for power supplies, DC-DC converters, power switching circuits, motor control and high-speed switching applications.

The IRFB3206PBF is based on HEXFET Power MOSFET technology and provides improved avalanche ruggedness, dynamic dV/dt capability and efficient power switching. It is suitable for applications requiring low conduction losses, high current capability and reliable operation in DC power circuits.

Technical description
The IRFB3206PBF features 60V drain-source voltage, maximum RDS(on) of 3.0mΩ at VGS 10V and ID 75A, maximum gate-source voltage of ±20V and junction operating temperature from -55°C to +175°C. The datasheet specifies 210A silicon-limited current at 25°C, 150A silicon-limited current at 100°C and 120A package / wire bond limited current.

Typical applications
Suitable for SMPS, high-efficiency synchronous rectification, UPS, DC-DC converters, motor drives, battery-powered systems, hard-switched circuits, high-speed power switching and general DC power switching applications.

Compatibility note
Before replacement, VDS rating, RDS(on), gate charge, pinout, TO-220AB package, cooling requirements and actual circuit current must be checked. The continuous current capability is practically limited by temperature, heatsinking, PCB layout, wiring and operating conditions.

Design note
High-current operation requires proper heatsinking and suitable gate drive. The low RDS(on) value applies with adequate gate drive voltage, typically VGS 10V.

Package weight: 0,002kg
Package volumetric: 0,002kg