INFINEONIRFB 3207PBF

The Infineon IRFB3207PBF is a 75V N-Channel power MOSFET in TO-220AB package, with 330W maximum power dissipation and low RDS(on) up to 4.5mΩ. It is suitable for power supplies, DC-DC converters, UPS systems, power switching circuits and high-speed switching applications.

The IRFB3207PBF belongs to the International Rectifier / Infineon HEXFET Power MOSFET family and is intended for applications requiring low conduction losses, high switching current capability and reliable operation in DC power circuits. The low RDS(on) value applies with suitable gate drive, typically VGS 10V.

Technical description
The IRFB3207PBF features 75V drain-source voltage, 3.6mΩ typical and 4.5mΩ maximum RDS(on), ±20V maximum gate-source voltage and junction operating temperature from -55°C to +175°C. The datasheet specifies 170A drain current, but also notes that the package limitation current is 75A.

Typical applications
Suitable for SMPS, UPS, DC-DC converters, synchronous rectification, motor drives, hard-switched circuits, high-speed power switching, battery systems and general DC power switching applications.

Compatibility note
Before replacement, VDS rating, RDS(on), gate charge, pinout, TO-220AB package, cooling requirements and actual operating current must be checked. In practice, continuous current capability is limited by temperature, heatsinking, PCB layout, connections and operating conditions.

Design note
High-current operation requires proper heatsinking and a suitable gate driver. The device should not be selected only by its commercial 120A or 170A current rating without checking the datasheet and thermal limits.

Package weight: 0,002kg
Package volumetric: 0,002kg