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SKU: 801.023.0242

INFINEONIRLZ 44N

IRLZ44N Logic Level N-Channel Power MOSFET 55V 47A TO-220 Infineon
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Indicative retail price (incl. 24% VAT): 0,90 €

IRLZ44N N-Channel Logic Level Power MOSFET 55V 47A TO-220 by International Rectifier / Infineon, suitable for power switching circuits, DC loads, PWM control, LED drivers and motor control applications.

The IRLZ44N is an N-Channel Power MOSFET using HEXFET / IR MOSFET technology, originally from International Rectifier and now from Infineon. It features 55V Drain-Source voltage, continuous Drain current up to 47A and low RDS(on) of 22mOhm max at VGS 10V. As a logic-level MOSFET, it can be driven more effectively from lower gate voltages compared with standard MOSFETs such as the IRFZ44N, with RDS(on) of 35mOhm max at 4.5V.

Technical description

The IRLZ44N is suitable for use as a power switch in low-voltage DC applications. The TO-220 package allows easy PCB mounting and heatsink use when load current or thermal dissipation requires it. The logic-level gate makes it useful in Arduino, microcontroller and PWM drive circuits, provided that current, temperature and heat dissipation limits are respected.

Typical applications

Suitable for DC motor control, LED dimmers, PWM switching, load switches, battery powered circuits, robotics projects, power supplies, small power converters, automation systems, electronic projects and general DC load switching applications.

Compatibility note

The IRLZ44N is a logic-level MOSFET and is more suitable than the IRFZ44N for 5V logic drive. For 3.3V drive or high current operation, conduction losses, temperature and actual VGS must be checked. In power applications, proper heatsinking and correct gate drive design are recommended.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerInternational Rectifier / Infineon
ModelIRLZ44N
Recommended ordering codeIRLZ44NPBF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / IR MOSFET
Logic level gate driveYes
Maximum Drain-Source voltage VDS55V
Maximum continuous Drain current ID47A @ TC 25°C
RDS(on)22mOhm max @ VGS 10V
RDS(on)35mOhm max @ VGS 4.5V
Gate threshold voltage VGS(th)1V to 2V
Typical gate threshold voltage1.5V
Maximum Gate-Source voltage VGS±16V
Total gate charge Qgapproximately 32nC @ 4.5V
Gate-to-Drain charge Qgdapproximately 16.7nC
Maximum power dissipation Ptot83W
Thermal resistance Junction-to-Case RthJCapproximately 1.8K/W
Operating temperature-55°C to +175°C
Maximum junction temperature175°C
PackageTO-220 / TO-220AB
Mounting typeTHT / Through Hole
TerminalsGate, Drain, Source
Suitable for heatsink use in power applications
RoHS compliant
Suitable for Arduino, microcontrollers, PWM, DC motor control, LED drivers and load switching
More suitable for 5V logic drive than IRFZ44N
For 3.3V logic or high current operation, thermal losses must be checked
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
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