Click for zoom

SKU: 801.023.0169

INFINEONIRLZ 34N

IRLZ34N Logic Level N-Channel Power MOSFET 55V 30A TO-220 Infineon
To see purchase prices you must be a registered user!
Indicative retail price (incl. 24% VAT): 0,65 €

IRLZ34N N-Channel Logic Level Power MOSFET 55V 30A TO-220 by International Rectifier / Infineon, suitable for power switching applications, PWM control, DC loads, LED drivers, power supplies and motor control.

The IRLZ34N is an N-Channel Power MOSFET using HEXFET / IR MOSFET technology, originally from International Rectifier and now from Infineon. It features 55V Drain-Source voltage, continuous Drain current up to 30A and low RDS(on) of 35mOhm max at VGS 10V. As a logic-level MOSFET, it can be driven from lower gate voltage compared with standard MOSFETs, with RDS(on) of 60mOhm max at 4.5V.

Technical description

The IRLZ34N is suitable for use as an electronic switch in low-voltage DC circuits. The TO-220 package allows easy PCB mounting and heatsink use when heat dissipation is required. The logic-level gate makes it useful in Arduino, microcontroller, PWM drive and DC load control applications.

Typical applications

Suitable for DC motor control, LED dimmers, PWM switching, load switches, battery powered circuits, robotics projects, automation systems, power supplies, small power converters and general DC load switching applications.

Compatibility note

The IRLZ34N is a logic-level MOSFET and is suitable for 5V logic drive. For 3.3V drive or high current operation, conduction losses, temperature and actual VGS must be checked. In power applications, proper gate drive and suitable cooling are recommended.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerInternational Rectifier / Infineon
ModelIRLZ34N
Recommended ordering codeIRLZ34NPBF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / IR MOSFET
Logic level gate driveYes
Maximum Drain-Source voltage VDS55V
Maximum continuous Drain current ID30A @ TC 25°C
RDS(on)35mOhm max @ VGS 10V
RDS(on)60mOhm max @ VGS 4.5V
Gate threshold voltage VGS(th)1V to 2V
Typical gate threshold voltage1.5V
Maximum Gate-Source voltage VGS+/-16V
Total gate charge Qgapproximately 16.7nC @ 4.5V
Gate-to-Drain charge Qgdapproximately 9.3nC
Maximum power dissipation Ptot56W
Thermal resistance Junction-to-Case RthJCapproximately 2.7K/W
Operating temperature-55°C to +175°C
Maximum junction temperature175°C
PackageTO-220 / TO-220AB
Mounting typeTHT / Through Hole
TerminalsGate, Drain, Source
Suitable for heatsink use in power applications
RoHS compliant
Suitable for Arduino, microcontrollers, PWM, DC motor control, LED drivers and load switching
More suitable for 5V logic drive than non logic-level MOSFETs
For 3.3V logic or high current operation, thermal losses must be checked
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
UserID/Email:
Password: