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SKU: 801.023.0164

INFINEONIRLR 8726PBF

IRLR8726 N-Channel Logic Level Power MOSFET 30V 86A SMD DPAK Infineon
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Indicative retail price (incl. 24% VAT): 1,86 €

IRLR8726 N-Channel Logic Level Power MOSFET 30V 86A SMD DPAK by International Rectifier / Infineon, suitable for DC-DC converters, synchronous buck converters, battery systems, inverters, DC motor control and low-voltage power switching applications.

The IRLR8726 is an N-Channel Power MOSFET from International Rectifier / Infineon in an SMD DPAK / TO-252 package. It features 30V Drain-Source voltage, continuous Drain current up to 86A and very low RDS(on) of 5.8mOhm max at VGS 10V. As a logic-level MOSFET, it supports lower gate drive operation, with RDS(on) of 8mOhm max at 4.5V, making it suitable for 5V logic control circuits.

Technical description

The IRLR8726 is designed for applications requiring low on-resistance, high current capability and fast switching. The SMD DPAK / TO-252 package allows surface mounting and effective heat dissipation through suitable PCB copper area. It is suitable for synchronous rectification, DC-DC converters, load switching and low-voltage PWM power applications.

Typical applications

Suitable for high frequency synchronous buck converters, isolated DC-DC converters, battery management systems, DC motor control, low-voltage inverters, power supplies, electronic load switches, LED drivers, robotics projects and PWM power switching circuits.

Compatibility note

The IRLR8726 is an SMD MOSFET in DPAK / TO-252 package and is not mechanically identical to TO-220 MOSFETs. Before replacement, verify the footprint, pin configuration, VDS voltage, ID current, RDS(on), gate drive and PCB thermal requirements.

Weight: approximately 0.001 kg.



Package weight: 0,001kg
Package volumetric: 0,001kg
ManufacturerInternational Rectifier / Infineon
ModelIRLR8726
Related part numbersIRLR8726PBF / IRLR8726TRPBF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / StrongIRFET
Logic level gate driveYes
Maximum Drain-Source voltage VDS30V
Maximum continuous Drain current ID86A @ TC 25°C
Continuous Drain current ID61A @ TC 100°C
Pulsed Drain current IDMup to 340A
RDS(on)5.8mOhm max @ VGS 10V
RDS(on)8.0mOhm max @ VGS 4.5V
Gate threshold voltage VGS(th)1.35V to 2.35V
Typical gate threshold voltage1.8V
Maximum Gate-Source voltage VGS+/-20V
Total gate charge Qgapproximately 15nC typ. @ VGS 4.5V
Gate-to-Drain charge Qgdapproximately 5.7nC
Input capacitance Cissapproximately 2150pF
Output capacitance Cossapproximately 480pF
Reverse transfer capacitance Crssapproximately 205pF
Body diode forward voltage VSDup to 1.0V
Reverse recovery time trrapproximately 24ns typ., 36ns max
Maximum power dissipation Ptot75W @ TC 25°C
Thermal resistance Junction-to-Case RthJCup to 2.0°C/W
Operating temperature-55°C to +175°C
Maximum junction temperature175°C
PackageDPAK / TO-252
Mounting typeSMD / Surface Mount
TerminalsGate, Drain, Source
Moisture Sensitivity LevelMSL 1
RoHS compliant
Suitable for DC-DC converters, synchronous rectification, battery systems, inverters and load switching
Not a TO-220 component
Proper thermal PCB layout is required for high current operation
Approximate weight0.001 kg
Datasheets
Warranty / repair terms
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