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SKU: 801.023.0144

INFINEONIRL 2203NPBF

IRL2203N Logic Level N-Channel Power MOSFET 30V 116A TO-220 Infineon
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Indicative retail price (incl. 24% VAT): 4,39 €

IRL2203N N-Channel Logic Level HEXFET Power MOSFET 30V 116A TO-220 by International Rectifier / Infineon, suitable for low-voltage power applications, DC motor control, PWM switching, load switching, power supplies and electronic projects.

The IRL2203N is an N-Channel HEXFET Power MOSFET from International Rectifier, now Infineon, in a TO-220AB / TO-220 package. It features 30V maximum Drain-Source voltage, continuous Drain current up to 116A and very low RDS(on) of 7mOhm max at VGS 10V. As a logic-level MOSFET, it can also be driven at lower gate voltage, with RDS(on) of 10mOhm max at 4.5V.

Technical description

The IRL2203N is designed for circuits requiring low on-resistance, high current capability and fast switching. The TO-220 package allows easy PCB mounting and heatsink use in power applications. The logic-level gate makes it suitable for microcontroller applications, PWM control and electronic DC load switching, provided that the electrical and thermal limits of the circuit are respected.

Typical applications

Suitable for DC motor control, PWM drivers, LED dimmers, electronic load switches, power supplies, DC-DC converters, battery circuits, robotics projects, automation systems and general low-voltage power switching applications.

Compatibility note

The IRL2203N is a logic-level MOSFET and is more suitable for 5V logic drive than non logic-level MOSFETs. For 3.3V drive or high current operation, conduction losses, temperature, actual VGS and cooling must be checked. It is not suitable for circuits above its 30V VDS rating.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerInternational Rectifier / Infineon
ModelIRL2203N
Recommended ordering codeIRL2203NPBF
Product typePower MOSFET
PolarityN-Channel
TechnologyHEXFET / IR MOSFET
Logic level gate driveYes
Maximum Drain-Source voltage VDS30V
Maximum continuous Drain current ID116A @ TC 25°C
Continuous Drain current ID82A @ TC 100°C
Pulsed Drain current IDMup to 400A
RDS(on)7mOhm max @ VGS 10V, ID 60A
RDS(on)10mOhm max @ VGS 4.5V, ID 48A
Gate threshold voltage VGS(th)from 1V
Maximum Gate-Source voltage VGS+/-16V
Total gate charge Qgapproximately 40nC typ. @ VGS 4.5V
Gate-to-Drain charge Qgdapproximately 22nC
Input capacitance Cissapproximately 3290pF
Output capacitance Cossapproximately 1270pF
Reverse transfer capacitance Crssapproximately 170pF
Body diode forward voltage VSDup to 1.2V
Reverse recovery time trrapproximately 56ns typ., up to 84ns
Maximum power dissipation Ptot130W
Thermal resistance Junction-to-Case RthJCup to 1.2K/W
Maximum junction temperature175°C
Operating / storage temperature-55°C to +175°C
PackageTO-220AB / TO-220
Mounting typeTHT / Through Hole
TerminalsGate, Drain, Source
Fully avalanche rated
RoHS compliant
Suitable for heatsink use in power applications
Suitable for DC motor control, PWM, LED drivers, DC-DC converters and load switching
Proper cooling and suitable gate drive are required for high current operation
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
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