INFINEONIRF 1010EPBF

The Infineon IRF1010E is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 60V and a continuous Drain current of up to 84A. It is supplied in a TO-220AB package and is suitable for low-voltage, high-current applications such as motor controllers, power converters, battery systems and electronic load switches.

Technical description

The IRF1010E features a maximum RDS(on) on-state resistance of only 12mOhm with a Gate-Source drive voltage of 10V and a Drain current of 50A. Its low on-state resistance helps reduce conduction losses and operating temperature in high-current applications.

The Gate threshold voltage VGS(th) ranges from 2V to 4V. This value indicates only the beginning of conduction and does not represent the complete turn-on voltage. A suitable gate-driver circuit, typically providing approximately 10V, is required for power-switching applications.

HEXFET technology provides fast switching performance, high avalanche pulse capability and increased reliability in demanding power circuits. The device includes an integral body diode and supports a maximum junction operating temperature of 175°C.

The TO-220AB package allows easy mounting on a heatsink. Suitable cooling, adequate PCB conductor size and proper calculation of power losses are required when operating at high current.

Typical applications

Suitable for DC motor controllers, DC/DC converters, low-voltage UPS and inverter systems, electronic load switches, battery systems, chargers, SMPS power supplies and general high-current switching applications.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, gate-drive voltage, switching speed, package and terminal configuration.

Weight: approximately 0.002 kg.