INFINEONIRF 820

The Infineon IRF820 is an N-Channel power MOSFET rated for a maximum Drain-Source voltage of 500V and a continuous Drain current of up to 2.5A. It is supplied in a TO-220AB package and is suitable for high-voltage switching circuits, switch-mode power supplies, electronic ballasts, power converters and industrial applications.

Technical description

The IRF820 features a maximum RDS(on) on-state resistance of 3.0 Ohm with a Gate-Source drive voltage of 10V. Its Gate threshold voltage VGS(th) ranges from 2V to 4V, but this value indicates only the beginning of conduction and not the complete turn-on of the MOSFET.

A suitable gate driver providing approximately 10V is required for power applications to reduce conduction losses and limit component temperature rise.

Its construction provides fast switching performance, repetitive avalanche capability and easy paralleling. The TO-220AB package allows the component to be mounted on a heatsink for improved thermal dissipation.

Typical applications

Suitable for SMPS power supplies, electronic lighting ballasts, DC/DC converters, inverter circuits, high-voltage power supplies, power controllers and general switching of inductive or resistive loads.

Compatibility note

Before replacing another MOSFET, verify the maximum Drain-Source voltage, continuous and pulsed Drain current, RDS(on), gate charge, switching speed, maximum power dissipation, package and terminal configuration.

Weight: approximately 0.002 kg.