STMicroelectronicsSTP 4N150

The STP4N150 from STMicroelectronics is a very high-voltage N-Channel Power MOSFET designed for power switching applications. With a 1500V drain-source voltage rating and 4A continuous drain current, it is suitable for circuits requiring high voltage capability and reliable operation in demanding power supply and industrial applications. The device is based on STMicroelectronics PowerMESH™ / MESH OVERLAY™ technology, providing improved switching performance, minimized intrinsic capacitances and reduced gate charge. It is 100% avalanche tested, which is important for switching applications involving inductive loads and transient conditions. The TO-220 / TO-220-3 package supports through-hole mounting and effective thermal dissipation when used with an appropriate heatsink.

Package weight: 0,002kg
Package volumetric: 0,002kg