INFINEONSPW20N60C3

Infineon SPW20N60C3 N-Channel CoolMOS Power MOSFET 600V 20.7A TO-247, suitable for switching power supplies, power converters, PFC circuits, inverters, industrial electronics and high-voltage applications.

The SPW20N60C3 by Infineon is an N-Channel CoolMOS Power Transistor in PG-TO247-3 / TO-247 package. It features 600V Drain-Source breakdown voltage, 20.7A maximum Drain current at 25°C and low RDS(on) of 0.19 Ohm max. CoolMOS C3 technology provides low gate charge, efficient switching performance and good behaviour in high-voltage, high-frequency power applications.

Technical description

The SPW20N60C3 is a high-voltage MOSFET with periodic avalanche rating, extreme dv/dt rating and high peak current capability. The TO-247 package supports effective heat dissipation with a suitable heatsink, making it suitable for powerful SMPS, PFC stages and power circuits requiring high voltage capability, current handling and reduced switching losses.

Typical applications

Suitable for switching power supplies, PFC converters, DC-DC converters, inverters, electronic ballasts, industrial power supplies, UPS systems, high-voltage circuits, power factor correction and general power switching applications.

Compatibility note

The SPW20N60C3 is a high-voltage N-Channel MOSFET and not an IGBT. Before replacement, verify the TO-247 package, pin configuration, VDS voltage, ID current, RDS(on), gate charge and thermal requirements of the application. Full enhancement requires suitable gate drive, typically 10V to 13V depending on the circuit.

Weight: approximately 0.006 kg.