Click for zoom

SKU: 801.004.0599

ON(FAIRCHILD)FQP11N40C

onsemi N-Channel Power MOSFET 400V 10.5A TO-220AB
To see purchase prices you must be a registered user!
Indicative retail price (incl. 24% VAT): 3,47 €
The FQP11N40C from onsemi / ON Semiconductor is an N-Channel enhancement mode power MOSFET designed for high-voltage switching applications. It features a 400V drain-source voltage rating and a continuous drain current of up to 10.5A, making it suitable for power supplies, power converters and load switching circuits. Its low RDS(on) of up to 530mΩ at VGS 10V helps reduce conduction losses, while low gate charge and high avalanche energy capability support efficient operation in switching and high-frequency power circuits. The device is 100% avalanche tested and is RoHS / Pb-Free compliant. The TO-220AB / TO-220-3 package provides through-hole mounting and effective thermal dissipation when used with a suitable heatsink.

Package weight: 0,020kg
Package volumetric: 0,100kg
Manufactureronsemi / ON Semiconductor
Manufacturer part numberFQP11N40C
Product typePower MOSFET
Polarity / channelN-Channel
TechnologyEnhancement Mode MOSFET
Drain-source voltage VDS400V
Continuous drain current ID10.5A
Drain-source on-resistance RDS(on)530mΩ max. @ VGS = 10V, ID = 5.25A
Typical drain-source on-resistance RDS(on)430mΩ typ.
Gate-source voltage VGS±30V max.
Gate threshold voltage VGS(th)2V to 4V
Total gate charge Qg28nC typ.
Reverse transfer capacitance Crss85pF typ.
Power dissipation PD135W
Junction operating temperature-55°C to +150°C
100% avalanche tested
Low gate charge for improved switching performance
Suitable for high-voltage power switching applications
Mounting typeThrough Hole
PackageTO-220AB / TO-220-3
Number of pins3
CompliancePb-Free / RoHS
Applicationsswitched mode power supplies, active PFC, power converters, electronic lamp ballasts, industrial power supplies, load switching circuits
Datasheets
Warranty / repair terms
UserID/Email:
Password: