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SKU: 801.003.1519

INFINEONIRGIB 10B60KD1

IRGIB10B60KD1 IGBT 600V 10A TO-220F FullPak Infineon
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Indicative retail price (incl. 24% VAT): 4,95 €

IRGIB10B60KD1 N-Channel IGBT 600V 10A TO-220F FullPak by International Rectifier / Infineon, suitable for motor control, inverters, power supplies, industrial automation and high-voltage switching applications.

The IRGIB10B60KD1 is a power IGBT with integrated ultrafast soft recovery diode, originally from International Rectifier and now associated with Infineon. It features 600V Collector-Emitter voltage, continuous Collector current of 10A at 100°C and 16A at 25°C, plus low saturation voltage VCE(on) typically 1.7V. The fully insulated TO-220 FullPak / TO-220F package provides electrical isolation from the heatsink, making installation easier in power applications.

Technical description

The IRGIB10B60KD1 uses Non Punch Through IGBT technology with positive VCE(on) temperature coefficient, helping stable operation and improved current sharing in parallel applications. The integrated ultrafast soft recovery diode helps reduce switching losses and EMI in switching circuits. The device features over 10us short circuit capability and Square RBSOA, making it suitable for demanding power control applications.

Typical applications

Suitable for motor control, inverters, soft switching converters, industrial power supplies, UPS systems, heating systems, high-voltage PWM circuits, power switching, automation systems and applications requiring a 600V IGBT with integrated fast diode.

Compatibility note

The IRGIB10B60KD1 is an IGBT, not a MOSFET. Gate drive is typically 15V VGE in power applications. Before replacement, verify the TO-220F / FullPak package, Gate, Collector, Emitter pin configuration, VCES voltage, Collector current, integrated diode requirement and thermal conditions of the circuit.

Weight: approximately 0.002 kg.



Package weight: 0,002kg
Package volumetric: 0,002kg
ManufacturerInternational Rectifier / Infineon
ModelIRGIB10B60KD1
Related part numberIRGIB10B60KD1P
Product typePower IGBT
Polarity / typeN-Channel IGBT
Integrated diodeUltrafast soft recovery diode
TechnologyLow VCE(on) Non Punch Through IGBT
Maximum Collector-Emitter voltage VCES600V
Continuous Collector current IC16A @ TC 25°C
Continuous Collector current IC10A @ TC 100°C
Pulsed Collector current ICMup to 32A
Clamped inductive load current ILMup to 32A
Diode continuous forward current IF16A @ TC 25°C
Diode continuous forward current IF10A @ TC 100°C
Diode maximum forward current IFM32A
VCE(on)1.7V typ., 2.10V max @ IC 10A, VGE 15V, TJ 25°C
VCE(on)2.05V typ., 2.35V max @ IC 10A, VGE 15V, TJ 150°C
Gate threshold voltage VGE(th)3.5V to 5.5V
Maximum Gate-Emitter voltage VGE+/-20V
Forward transconductance gfeapproximately 5.0S
Diode forward voltage VFM1.80V typ., 2.40V max @ IF 5A, TJ 25°C
Total gate charge Qg41nC typ., 62nC max
Gate-to-Emitter charge Qge4.6nC typ., 6.9nC max
Gate-to-Collector charge Qgc19nC typ., 29nC max
Turn-on switching loss Eonapproximately 156uJ typ.
Turn-off switching loss Eoffapproximately 165uJ typ.
Total switching loss Etotapproximately 321uJ typ.
Turn-on delay time td(on)approximately 25ns typ.
Rise time trapproximately 24ns typ.
Turn-off delay time td(off)approximately 180ns typ.
Fall time tfapproximately 62ns typ.
Input capacitance Ciesapproximately 610pF typ.
Output capacitance Coesapproximately 66pF typ.
Reverse transfer capacitance Cresapproximately 23pF typ.
Diode reverse recovery time trrapproximately 79ns typ.
Diode reverse recovery charge Qrrapproximately 553nC typ.
Short circuit capabilitygreater than 10us @ TJ 150°C
Reverse Bias Safe Operating AreaFull Square RBSOA
RMS isolation voltage terminal-to-case2500V
Power dissipation PD44W @ TC 25°C
Power dissipation PD22W @ TC 100°C
Thermal resistance Junction-to-Case IGBTup to 3.4°C/W
Thermal resistance Junction-to-Case diodeup to 5.3°C/W
Thermal resistance Junction-to-Ambientup to 62°C/W
Operating junction temperature-55°C to +175°C
Storage temperature-55°C to +175°C
PackageTO-220 FullPak / TO-220F
Package typefully insulated
Mounting typeTHT / Through Hole
TerminalsGate, Collector, Emitter
Not an SMD component
Not a MOSFET
Suitable for motor control, inverters, UPS, SMPS and power switching
Proper IGBT gate driver is required for correct operation
Approximate weight0.002 kg
Datasheets
Warranty / repair terms
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